Vapour phase etching involves exposing a substrate to a corrosive chemical in vapour form which will remove material that it comes into contact with. The sections of material that are removed can be selected by protecting parts of the substrate that are desired to be kept with a mask or coating.
Reactive Ion Etching (RIE) is a method that combines both chemical and physical etching to allow isotropic and anisotropic material removal. The etching process is carried out in a chemically reactive plasma containing positively and negatively charged ions generated from gases that are pumped into the reaction chamber. A mask on top of the substrate is used to protect designated areas from etching, exposing only the areas to be etched. Dry etching offers excellent process control for cleanliness, homogeneity, etch-rate, etch-profile, selectivity and run-to-run consistency, which is critical for high-fidelity pattern-transfer in micro- and nano-system technologies.RIE is extensively used in the field of displays & lighting (LEDs), semiconductors, electronics, MEMS, communication technology, microfluidics, optoelectronics and photovoltaics.
Plasma etching uses a finely controlled plasma to selectively remove material from a substrate.
Deep Reactive Ion Etching (DRIE) is effectively an extension of the Reactive Ion Etching (RIE) process, but can provide higher aspect ratio structures.The DRIE process alternates between etch and passivation cycles to allow patterns to be cut deeper into a substrate.Etch channels or other feature geometries with extremely high uniformity into glass, plastic or silicon substrates