Deep Reactive Ion Etching (DRIE)
Deep Reactive Ion Etching (DRIE)
Deep Reactive Ion Etching (DRIE) is effectively an extension of the Reactive Ion Etching (RIE) process, but can provide higher aspect ratio structures. The DRIE process alternates between etch and passivation cycles to allow patterns to be cut deeper into a substrate. Etch channels or other feature geometries with extremely high uniformity into glass, plastic or silicon substrates
List of available equipment
TOOL MAKE AND MODEL
LOCATION
Deep Reactive Ion Etcher, Ulvac NLD-570
ANFF SA
DRIE Etcher, Plasma Therm Versaline
ANFF QLD UQ - AIBN
ICP/RIE, Multi-etch system
ANFF VIC MCN
ICP/RIE, Silicon-specific dry etching
ANFF VIC MCN
ICP-RIE System, SAMCO
ANFF VIC MCN
NLD RIE, Si/SiO2
ANFF VIC MCN
TOOL MAKE AND MODEL
LOCATION
Deep Reactive Ion Etcher, Ulvac NLD-570
Deep reactive ion etcher (DRIE)
Description
Capable of deep etching features from the nano to micron scale.
Related Information
Etch channel or other feature geometries with extremely high uniformity into glass, plastic or silicon substrates. Deep reactive ion etcher (DRIE)
Tool Contact
ANFF-SA@unisa.edu.au
TOOL MAKE AND MODEL
LOCATION
DRIE Etcher, Plasma Therm Versaline
Deep reactive ion etcher (DRIE)
Description
Controlled dry anisotropic etching of silicon wafers up to 6 inches in diameter utilising the Bosch process. The deep silicon etching (DSE) process alternates between deposition and isotropic etching in a chamber with an ICP configuration.
Related Information
Etching of silicon only. The deposition gas is typically C4F8 and the etching gas is commonly SF6. Gases available: SF6, C4F8, argon and oxygen. Substrate is 6 inch wafer. Fast silicon etch rate of 3 - 5 µm/min with a deep vertical wall. Deep reactive ion etcher (DRIE)
Tool Contact
anff@uq.edu.au
TOOL MAKE AND MODEL
LOCATION
ICP/RIE, Multi-etch system
Deep reactive ion etcher (DRIE)
Description
General dry reactive etching of wide range of materials.
Related Information
Reactive species and ions are used to react with the substrate that is placed in the reactor to etch Si, SiO2, SI3N4, SiC, a-Si, Ti, TiW, Mo, Nb, Ta, Graphene and other 2D materials, Cr, Au, LiNbO3, Al, Al2O3, Hf, Hf02, TiN, TiO2, and more. Deep reactive ion etcher (DRIE)
Tool Contact
mcn-enquiries@nanomelbourne.com
TOOL MAKE AND MODEL
LOCATION
ICP/RIE, Silicon-specific dry etching
Deep reactive ion etcher (DRIE) capable of Bosch process
Description
Silicon-specific dry etching with good control over feature size and Bosch process capability for high aspect ratio structures.
Related Information
SF6 gas is turned in to a plasma using RF power. The plasma that is created is highly reactive to Silicon. The SF6 combined with a passivating chemistry using C4F8, which is used to control the Silicon etching profile. Deep reactive ion etcher (DRIE) capable of Bosch process
Tool Contact
mcn-enquiries@nanomelbourne.com
TOOL MAKE AND MODEL
LOCATION
ICP-RIE System, SAMCO
Description
The RIE-400iP is a load lock type etching system used to precisely and uniformly etch various semiconductor materials and dielectric films. The system is equipped with unique ICP source for generating uniform and high-density plasma.
Related Information
Etching of optoelectronic materials e.g. LiNbO3
Tool Contact
mcn-enquiries@nanomelbourne.com
TOOL MAKE AND MODEL
LOCATION
NLD RIE, Si/SiO2
Description
ULVAC NLD-570 etch system is designed with low process pressure, high density plasma, low electron temperature which are perfect for the etch applications of deep oxide, LiNbO3, TiO2, quartz, glass, and Pyrex etc. The NLD-570 is also capable of etching Si both in RIE and DRIE applications.
Related Information
Tool Contact
mcn-enquiries@nanomelbourne.com