Metalorganic Vapour Phase Epitaxy (MOVPE)
Metalorganic Vapour Phase Epitaxy (MOVPE)
Metalorganic vapour-phase epitaxy (MOVPE) uses metal-organic precursors to enable the growth of 2D and 3D monocrystaline semiconductors
List of available equipment
TOOL MAKE AND MODEL
LOCATION
MOVPE, Aixtron 3x2FT system III-N
ANFF ACT
MOVPE, Aixtron 200/4 system
ANFF ACT
MOVPE, Aixtron 3x2FT system III-V
ANFF ACT
TOOL MAKE AND MODEL
LOCATION
MOVPE, Aixtron 3x2FT system III-N
MOVPE CCS (Close-Coupled Showerhead) system for growth of III-nitride semiconductor structures
Description
Epitaxial growth of III-N (nitride based materials) 2D and 3D semiconductor structures.
Related Information
A range of available sources (Ga, Al, In, B, Si, Mg, N) allows for the growth of wide range of semiconductor structures for various applications. Growth can be done on various substrates (Sapphire, Si, etc.) and various crystal orientation up to 4"" diameter and surface temperature up to 1300C. MOVPE CCS (Close-Coupled Showerhead) system for growth of III-nitride semiconductor structures
Tool Contact
horst.punzmann@anu.edu.au
TOOL MAKE AND MODEL
LOCATION
MOVPE, Aixtron 200/4 system
MOVPE (horizontal flow) system for epitaxial growth of III-V semiconductor structures.
Description
Epitaxial growth of III-V (arsenide, phosphide and antimonide based materials) 2D and 3D semiconductor structures.
Related Information
A range of available sources (Ga, Al, In, Sn, Si, Zn, Sb and As, P) allows for the growth of wide range of semiconductor structures for various applications including metal catalysed nanostructures. Growth can be done on various substrates (GaAs, InP, InAs, GaP, Si etc.) and various crystal orientation up to 4"" diameter and surface temperature up to 700C. MOVPE (horizontal flow) system for epitaxial growth of III-V semiconductor structures.
Tool Contact
horst.punzmann@anu.edu.au
TOOL MAKE AND MODEL
LOCATION
MOVPE, Aixtron 3x2FT system III-V
MOVPE CCS (Close-Coupled Showerhead) system for growth of III-V (III-As, III-P, III-Sb) semiconductor structures
Description
Epitaxial growth of III-V (arsenide, phosphide and antimonide based materials) 2D and 3D semiconductor structures.
Related Information
A range of available sources (Ga, Al, In, C, Si, Mg, Zn, Sb and As, P in hydride and alkyl forms) allows for the growth of wide range of semiconductor structures for various applications. Growth can be done on various substrates (GaAs, InP, InAs, GaP, Si etc.) and various crystal orientation up to 4"" diameter and surface temperature up to 800C. MOVPE CCS (Close-Coupled Showerhead) system for growth of III-V (III-As, III-P, III-Sb) semiconductor structures
Tool Contact
horst.punzmann@anu.edu.au