Plasma Assisted Atomic Layer Deposition (PAALD)
Plasma Assisted Atomic Layer Deposition (PAALD)
PA-ALD, also known as Plasma-Enhanced ALD (PEALD), incorporates plasma into the ALD process. Plasma is a highly energised state of matter containing ions, electrons, and neutral particles. By using plasma, PA-ALD enhances the reactivity of precursors, allowing deposition at lower temperatures. This is particularly useful for substrates that cannot tolerate high thermal budgets, such as polymers or temperature-sensitive electronic components. PA-ALD also enables the deposition of films with tailored properties, such as improved hardness, conductivity, or optical characteristics
List of available equipment
TOOL MAKE AND MODEL
LOCATION
Plasma-assisted Atomic Layer Deposition (P-ALD), Picosun Sunale
ANFF ACT
TOOL MAKE AND MODEL
LOCATION
Plasma-assisted Atomic Layer Deposition (P-ALD), Picosun Sunale
Atomic layer deposition (ALD) system for depositing Al, Zn, Ti, Hf, Ta, Si, Zr oxides and TiN
Description
Load-locked ALD system with thermal and plasma ALD processes.
Related Information
Sources for: Ti, Zn, Al, Si, Hf, Ta, Zr Atomic layer deposition (ALD) system for depositing Al, Zn, Ti, Hf, Ta, Si, Zr oxides and TiN
Tool Contact
horst.punzmann@anu.edu.au