Thermal Atomic Layer Deposition (TALD)
Thermal Atomic Layer Deposition (TALD)
Thermal Atomic Layer Deposition (T-ALD) is a thin-film deposition technique that relies on sequential, self-limiting chemical reactions to deposit materials one atomic layer at a time. This process ensures precise control over film thickness and composition, making it ideal for applications requiring high-quality, uniform thin films.
List of available equipment
TOOL MAKE AND MODEL
LOCATION
Thermal Atomic Layer Deposition (T-ALD), Cambridge Savannah
ANFF ACT
TOOL MAKE AND MODEL
LOCATION
Thermal Atomic Layer Deposition (T-ALD), Cambridge Savannah
Thermal Atomic Layer Deposition (T-ALD)
Description
Thermal Atomic Layer Deposition System (T-ALD) Savannah is a thermal atomic layer deposition (ALD) system for samples up to an 8 wafer.
Related Information
Available materials to be deposited are: Al2O3, TiO2 and TiN, ZnO, HfO2, Ta2O5 and TaN, and SiO2. Thermal Atomic Layer Deposition (T-ALD)
Tool Contact
horst.punzmann@anu.edu.au