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Low Pressure Chemical Vapour Deposition (LPCVD)
Low Pressure Chemical Vapour Deposition (LPCVD)
Low Pressure Chemical Vapor Deposition. It is a technique that uses heat and low pressure to deposit thin films of various materials on a solid substrate. The low pressure reduces unwanted gas phase reactions and improves film uniformity. The film formation occurs when a precursor gas reacts with the substrate surface.
List of available equipment
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Furnace- Hitech LPCVD
More information to come.
Griffith University
QLD Node
Description
Small batch size horizontal LPCVD furnace for deposition of LTO and polysilicon
Related Information
LPCVD furnace for the deposition of low temperature oxide.
Tool Contact
glenn.walker@griffith.edu.au
Furnace- Hitech MK1
More information to come.
Griffith University
QLD Node
Description
Small batch size horizontal very low pressure furnace for the deposition of 3C-SiC on Si
Related Information
Custom made small batch epitaxial reactor for the deposition of 3C Silicon Carbide on Silicon wafers up to 150mm diameter.
Tool Contact
glenn.walker@griffith.edu.au
Molecular beam epitaxy- SPT Micro EpiFlx
Large batch production reactor for SiC Deposition
Griffith University
QLD Node
Description
Global standard for thin epitaxial thin films of SiC. Can process wafers of up to 300mm Si wafers with a uniformity of sub-1%.
Related Information
Production reactor for the deposition of SiC on Si for MEMs, photonic and mechanical exploitation of SiC. Custom made epitaxial reactor for the deposition of 3C Silicon Carbide on 150mm to 300mm Silicon wafers.
Tool Contact
glenn.walker@griffith.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Furnace- Hitech LPCVD
More information to come.
Griffith University
QLD Node
Description
Small batch size horizontal LPCVD furnace for deposition of LTO and polysilicon
Related Information
LPCVD furnace for the deposition of low temperature oxide.
Tool Contact
glenn.walker@griffith.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Furnace- Hitech MK1
More information to come.
Griffith University
QLD Node
Description
Small batch size horizontal very low pressure furnace for the deposition of 3C-SiC on Si
Related Information
Custom made small batch epitaxial reactor for the deposition of 3C Silicon Carbide on Silicon wafers up to 150mm diameter.
Tool Contact
glenn.walker@griffith.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Molecular beam epitaxy- SPT Micro EpiFlx
Large batch production reactor for SiC Deposition
Griffith University
QLD Node
Description
Global standard for thin epitaxial thin films of SiC. Can process wafers of up to 300mm Si wafers with a uniformity of sub-1%.
Related Information
Production reactor for the deposition of SiC on Si for MEMs, photonic and mechanical exploitation of SiC. Custom made epitaxial reactor for the deposition of 3C Silicon Carbide on 150mm to 300mm Silicon wafers.
Tool Contact
glenn.walker@griffith.edu.au
