Ion Implantation, Doping and Diffusion
Ion Implantation, Doping and Diffusion
Incorporating a dopant can allow a material to take on novel features – this could include changing a material’s hardness, reactivity, optical and electrical properties, or any number of other adjustments. To introduce the impurity, the substrate is typically heated, or the new material is propelled into the sample.
List of available equipment
TOOL MAKE AND MODEL
LOCATION
Furnace, Thermco boron diffusion
ANFF NSW UNSW
Furnace, Thermco phosphorus diffusion
ANFF NSW UNSW
Ion implanter, IBS IMC-200
ANFF NSW UNSW
TOOL MAKE AND MODEL
LOCATION
Furnace, Thermco boron diffusion
Furnace for diffusion of boron
Description
A high-performance thermal processing system designed for precise doping of semiconductor materials. It utilises advanced diffusion techniques to introduce boron into substrates, ensuring uniformity and accuracy. With features like multi-zone temperature control, clean gas delivery systems, and compatibility with various wafer sizes, it is ideal for applications in semiconductor manufacturing, photovoltaic production, and research environments. Its robust design and reliable performance make it a valuable tool for achieving consistent and high-quality results.
Related Information
More information to come. Furnace for diffusion of boron
Tool Contact
anff@unsw.edu.au
TOOL MAKE AND MODEL
LOCATION
Furnace, Thermco phosphorus diffusion
Furnace for diffusion of phosphorus
Description
A high-precision thermal processing system designed for doping semiconductor materials with phosphorus. It features advanced multi-zone temperature control, clean gas delivery systems, and compatibility with various wafer sizes. This furnace ensures uniform diffusion and high-quality results, making it ideal for applications in semiconductor manufacturing, photovoltaic production, and research environments. Its robust design and reliable performance support consistent and efficient processing.
Related Information
More information to come. Furnace for diffusion of phosphorus
Tool Contact
anff@unsw.edu.au
TOOL MAKE AND MODEL
LOCATION
Ion implanter, IBS IMC-200
Ion implanter
Description
Advanced ion implanter designed for research and production applications. It is used to modify material properties by implanting ions into substrates, enabling precise control over electrical, optical, and mechanical characteristics. With capabilities for processing small samples to 6-inch wafers, it offers a wide energy range, multicharging options, and high beam current. This system is ideal for applications in semiconductor manufacturing, nanotechnology, and materials science.
Related Information
More information to come. Ion implanter
Tool Contact
anff@unsw.edu.au