The PhableR tool provides unprecedented ability to print high resolution periodic structures in a low-cost, table-top system.Structures such as sub-micron period linear gratings and 2D patterns such as hexagonal and square lattices are printed with high uniformity and fidelity.

The PhableR-100C uses DUV for patterning at high resolution below 300nm pitch and exposures are non-contact, protecting wafers and masks from physical contact and contamination.

The SUSS MA6 Mask Aligner is a high-resolution UV photolithography tool designed for laboratory applications and small-scale production. It enables precise pattern transfer for microfabrication, making it ideal for research and prototyping environments.

1x projection aligner for 100mm or 4” wafers using 5” or 6 mask plates. Full autoload from cassettes, intralayer autoalign to <200nm, resolution 1.5micron on L-S paterns.

Projection Mask aligner: 1x projection lith tool 100mm wafers Auto Feeder: Single, cassette to cassette, backside wafer handling Wafer size: Currently 4"""" (5"""" and 3"""" sizes available) Mask size: Currrently 5"""" (6"""" and 4"""" sizes available) Resolution: 1.5µm (positive resist) Depth of focus: > + 6µm (linewidth 1.5µm) Distortion: 3 sigma < 0.5µm Scanning accuracy: < + 1.5% Auto alignment accuracy: LBS AA 3sigma < 0.6µm (HeNe laser beam scan) Throughput (6¡±wafer) > 83 wfs/h (first mask mode) / > 72 wfs/h (LBS AA mode)

Multilayer exposures of photoresists through a mask. Can resolve alignment marks down to 1µm and perform front and backside alignment on both 4 and 6 inch wafers.

Any photoresist that can be exposed with 365 and 405nm.The system provides controlled pressure between the mask and the resist coated substrate. A shutter opens and closes providing a specific dose of UV to the exposed resist. Mask aligner and resist exposure system

High resolution double side mask aligner with split-field microscopes which is capable of handling multiple wafer sizes with quick change-over time. Capable of processing ceramics, glasses, metals, polymers and semiconductors

Used for a variety of applications to transfer multiple layers of nanoscale patterns into photoresist films. Mask aligner and resist exposure system with NIL capability

Mask aligner up to 6 inch substrate

Versatile photolithography system designed for contact and proximity exposure of substrates up to 100 mm (4") diameter. Equipped with precision alignment optics and multiple mask lithography capability, the MA6 delivers sub‑micron resolution under ideal conditions. Widely used for semiconductor, MEMS, and micro‑optics fabrication, it provides reliable performance for research and prototyping environments.

Mask aligner used for 4 inch/100mm wafers,Intensity 2-4 mW/cm2 in I-line mode. The MA-6 mask aligner operates in I-line mode currently only on 100mm or 4” wafers. Under ideal circumstances with very clean substrates and masks, we have printed sub 0.5um features on this system, but its resolution is essentially limited by substrate quality. Mask Aligner for Lithography

SUSS MA6 allow for aligning multi layer features using multiple masks. This means that multiple layers can be built up on a single device by using appropriate alignment markers in the mask design.

Contact mask aligner system to perform precision mask-to-wafer front- or back-side alignment

Mask-to-wafer front- or back-side alignment and near-UV photoresist exposure in hard- and soft- and proximity contact, as well as high and low vacuum contact; from small pieces up to 6"" wafers. This system allows alignment accuracy down to ~0.5μm, the use of thin and thick resists and the ability to undertake true backside alignment. Photolithography mask aligner

Creates structures of down to 1μm and perform front side alignment on both 4 and 6 inch wafers.

Can be used with any photoresist that can be exposed with 365 and 405nm. Aligns and exposes a photoresist layer to a patterned photomask. Chucks available for 100mm, 150mm and 200mm wafers Mask aligner and resist exposure system

EVG 6200 allow for aligning multi layer features using multiple masks. This means that multiple layers can be built up on a single device by using appropriate alignment markers in the mask design. In addition to backside alignment capability

UV mask aligner up to 3 inch substrate