The PhableR tool provides unprecedented ability to print high resolution periodic structures in a low-cost, table-top system.Structures such as sub-micron period linear gratings and 2D patterns such as hexagonal and square lattices are printed with high uniformity and fidelity.

The PhableR-100C uses DUV for patterning at high resolution below 300nm pitch and exposures are non-contact, protecting wafers and masks from physical contact and contamination.

Mask aligner used for Lithography

Mask aligner used for 4 inch/100mm wafers,Intensity 2-4 mW/cm2 in I-line mode. The MA-6 mask aligner operates in I-line mode currently only on 100mm or 4” wafers. Under ideal circumstances with very clean substrates and masks, we have printed sub 0.5um features on this system, but its resolution is essentially limited by substrate quality.

SUSS MA6 allow for aligning multi layer features using multiple masks. This means that multiple layers can be built up on a single device by using appropriate alignment markers in the mask design.

More information to come.

The MPA-500 aligner operates in broadband exposure mode only on 100mm or 4” wafers using 5” mask plates. The “MPA” stands for Mirror Projection Aligner and so the optics is completely achromatic being reflector based so the broadband exposure is not an issue in resolution terms and in fact speeds up exposure using more of the 2kW arc lamp spectrum.

Projection Mask aligner: 1x projection lith tool 100mm wafers Auto Feeder: Single, cassette to cassette, backside wafer handling Wafer size: Currently 4" (5" and 3" sizes available) Mask size: Currrently 5" (6" and 4" sizes available) Resolution: 1.5µm (positive resist) Depth of focus: > + 6µm (linewidth 1.5µm) Distortion: 3 sigma < 0.5µm Scanning accuracy: < + 1.5% Auto alignment accuracy: LBS AA 3sigma < 0.6µm (HeNe laser beam scan) Throughput (6¡±wafer) > 83 wfs/h (first mask mode) / > 72 wfs/h (LBS AA mode)

High resolution double side mask aligner with split-field microscopes which is capable of handling multiple wafer sizes with quick change-over time. Capable of processing ceramics, glasses, metals, polymers and semiconductors

Used for a variety of applications to transfer multiple layers of nanoscale patterns into photoresist films.

Multilayer exposures of photoresists through a mask. Can resolve alignment marks down to 1µm and perform front and backside alignment on both 4 and 6 inch wafers.

Any photoresist that can be exposed with 365 and 405nm.The system provides controlled pressure between the mask and the resist coated substrate. A shutter opens and closes providing a specific dose of UV to the exposed resist.

Creates structures of down to 1μm and perform front side alignment on both 4 and 6 inch wafers.

Can be used with any photoresist that can be exposed with 365 and 405nm. Aligns and exposes a photoresist layer to a patterned photomask. Chucks available for 100mm, 150mm and 200mm wafers

Contact mask aligner system to perform precision mask-to-wafer front- or back-side alignment

Mask-to-wafer front- or back-side alignment and near-UV photoresist exposure in hard- and soft- and proximity contact, as well as high and low vacuum contact; from small pieces up to 6" wafers. This system allows alignment accuracy down to ~0.5μm, the use of thin and thick resists and the ability to undertake true backside alignment.

EVG 6200 allow for aligning multi layer features using multiple masks. This means that multiple layers can be built up on a single device by using appropriate alignment markers in the mask design. In addition to backside alignment capability

More information to come.