Multiple mask lithography
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Multiple mask lithography

Photolithography is used to create a pattern on a substrate by shining light from a light source onto a photoresist that coats the surface of the substrate through a photomask and is followed by a development phase. Depending on the complexity of a device’s design, various deposition, etching and lithography processes can be cycled through many times. This could mean that more than one photolithography stage is required, potentially dozens, and each iteration could require a new mask. Each mask used has to be aligned perfectly to the previously processed layer if the final device is to operate as desired. To do this, photomasks are often made to feature alignment marks, but to assist with accuracy, mask aligners are commonly used to ensure things line up. These mask aligning systems also offer a great deal of control over the exposure settings and conditions in which the photolithography process takes place.

List of available equipment
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
EVG 620
UV lithography and NIL exposure
ACT Node Australian National University (ANU)
Description
Standard optical lithography and Nano-Imprint UV Lithography
Related Information
Process pieces up to 6 inch wafer with 1 micron resolution. Offers top-side alignment.
Tool Contact
horst.punzmann@anu.edu.au
Neutronix Quintel
Mask aligner and resist exposure system
Griffith University QLD Node
Description
Creates structures of down to 1μm and perform front side alignment on both 4 and 6 inch wafers.
Related Information
Can be used with any photoresist that can be exposed with 365 and 405nm.
Tool Contact
glenn.walker@griffith.edu.au
EVG 620
Mask aligner and resist exposure system
QLD Node University of Queensland
Description
Multilayer exposures of photoresists through a mask. Can resolve alignment marks down to 1µm and perform front and backside alignment on both 4 and 6 inch wafers.
Related Information
Any photoresist that can be exposed with 365 and 405nm.The system provides controlled pressure between the mask and the resist coated substrate. A shutter opens and closes providing a specific dose of UV to the exposed resist.
Tool Contact
anff@uq.edu.au
EVG 620
Mask aligner and resist exposure system with NIL capability
Melbourne Centre for Nanofabrication VIC Node
Description
A high-resolution mask aligner with split-field microscopes that is capable of handling multiple wafer sizes with quick change-over time. Features back side alignment capability for mask aligning.
Related Information
Used for a variety of applications to transfer multiple layers of nanoscale patterns into photoresist films.Provides a minimum feature size of approximately 1 µm.
Tool Contact
mcn-enquiries@nanomelbourne.com
EVG 620…
Mask aligner and resist exposure system with NIL capability
SA Node University of South Australia
Description
High resolution double side mask aligner with split-field microscopes which is capable of handling multiple wafer sizes with quick change-over time.Capable of processing ceramics, glasses, metals, polymers and semiconductors
Related Information
Used for a variety of applications to transfer multiple layers of nanoscale patterns into photoresist films.
Tool Contact
Simon.Doe@unisa.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
EVG 620
UV lithography and NIL exposure
SA Node University of South Australia
Description
Standard optical lithography and Nano-Imprint UV Lithography
Related Information
Process pieces up to 6 inch wafer with 1 micron resolution. Offers top-side alignment.
Tool Contact
horst.punzmann@anu.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Neutronix Quintel
Mask aligner and resist exposure system
SA Node University of South Australia
Description
Creates structures of down to 1μm and perform front side alignment on both 4 and 6 inch wafers.
Related Information
Can be used with any photoresist that can be exposed with 365 and 405nm.
Tool Contact
glenn.walker@griffith.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
EVG 620
Mask aligner and resist exposure system
SA Node University of South Australia
Description
Multilayer exposures of photoresists through a mask. Can resolve alignment marks down to 1µm and perform front and backside alignment on both 4 and 6 inch wafers.
Related Information
Any photoresist that can be exposed with 365 and 405nm.The system provides controlled pressure between the mask and the resist coated substrate. A shutter opens and closes providing a specific dose of UV to the exposed resist.
Tool Contact
anff@uq.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
EVG 620
Mask aligner and resist exposure system with NIL capability
SA Node University of South Australia
Description
A high-resolution mask aligner with split-field microscopes that is capable of handling multiple wafer sizes with quick change-over time. Features back side alignment capability for mask aligning.
Related Information
Used for a variety of applications to transfer multiple layers of nanoscale patterns into photoresist films.Provides a minimum feature size of approximately 1 µm.
Tool Contact
mcn-enquiries@nanomelbourne.com
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
EVG 620…
Mask aligner and resist exposure system with NIL capability
SA Node University of South Australia
Description
High resolution double side mask aligner with split-field microscopes which is capable of handling multiple wafer sizes with quick change-over time.Capable of processing ceramics, glasses, metals, polymers and semiconductors
Related Information
Used for a variety of applications to transfer multiple layers of nanoscale patterns into photoresist films.
Tool Contact
Simon.Doe@unisa.edu.au