
Plasma Enhanced Chemical Vapour Deposition (PECVD)
Plasma Enhanced Chemical Vapour Deposition (PECVD)
Plasma Enhanced Chemical Vapour Deposition (PECVD) uses a plasma to deposit a thin film of silicon dioxide or silicon nitrate onto a substrate. PECVD uses lower temperatures than the furnace systems to achieve an insulating layer on a variety of materials. PECVD is used in optics, microelectronics, energy applications, packaging and chemistry for the deposition of anti-reflective coatings, scratch resistant transparent coatings, electronically active layers, passivation layers, dielectric layers, isolating layers, etch stop layers, encapsulation and chemical protective coatings.
List of available equipment
TOOL MAKE AND MODEL
LOCATION
Inductively coupled plama chemical vapour deposition (ICPCVD), Sentech SI 500D
ANFF WA
Inductively coupled plasma chemical vapour deposition (ICPCVD), Oxford Instruments PlasmaPro 100
ANFF QLD Griffith
PECVD, Oxford PlasmaPro 100
ANFF NSW USYD
Plasma enhanced chemical vapour deposition system (PECVD), Oxford Instruments
ANFF ACT
Plasma enhanced chemical vapour deposition system (PECVD), Oxford Instruments Plasmalab 100
ANFF NSW UNSW
Plasma enhanced chemical vapour deposition system (PECVD), Oxford Instruments Plasmalab 100
ANFF VIC MCN
Plasma enhanced chemical vapour deposition system (PECVD), Oxford Instruments Plasmalab 100
ANFF VIC MCN
Plasma Polymerisation Reactors
ANFF VIC Swinburne
System for ICP Plasma Deposition, Oxford Instruments Plasmalab80 plus ICPCVD
ANFF WA