Plasma Enhanced Chemical Vapour Deposition (PECVD)
Plasma Enhanced Chemical Vapour Deposition (PECVD)
Plasma Enhanced Chemical Vapour Deposition (PECVD) uses a plasma to deposit a thin film of silicon dioxide or silicon nitrate onto a substrate. PECVD uses lower temperatures than the furnace systems to achieve an insulating layer on a variety of materials. PECVD is used in optics, microelectronics, energy applications, packaging and chemistry for the deposition of anti-reflective coatings, scratch resistant transparent coatings, electronically active layers, passivation layers, dielectric layers, isolating layers, etch stop layers, encapsulation and chemical protective coatings.
List of available equipment
TOOL MAKE AND MODEL
LOCATION
Inductively coupled plama chemical vapour deposition (ICPCVD), Sentech SI 500D
ANFF WA
Inductively coupled plasma chemical vapour deposition (ICPCVD), Oxford Instruments PlasmaPro 100
ANFF QLD Griffith
PECVD, Oxford PlasmaPro 100
ANFF NSW USYD
Plasma enhanced chemical vapour deposition system (PECVD), Oxford Instruments
ANFF ACT
Plasma enhanced chemical vapour deposition system (PECVD), Oxford Instruments Plasmalab 100
ANFF NSW UNSW
Plasma enhanced chemical vapour deposition system (PECVD), Oxford Instruments Plasmalab 100
ANFF VIC MCN
Plasma enhanced chemical vapour deposition system (PECVD), Oxford Instruments Plasmalab 100
ANFF VIC MCN
Plasma Polymerisation Reactors
ANFF VIC Swinburne
System for ICP Plasma Deposition, Oxford Instruments Plasmalab80 plus ICPCVD
ANFF WA
TOOL MAKE AND MODEL
LOCATION
Inductively coupled plasma chemical vapour deposition (ICPCVD), Oxford Instruments PlasmaPro 100
Description
Deposits thin films using inductively coupled plasma-enhanced chemical vapor deposition for high-quality, uniform coatings in semiconductor and materials research.
Related Information
Tool Contact
glenn.walker@griffith.edu.au
TOOL MAKE AND MODEL
LOCATION
Inductively coupled plama chemical vapour deposition (ICPCVD), Sentech SI 500D
System for ICP plasma deposition
Description
Thin film deposition via Inductively Coupled Plasma Enhanced Chemical Vapour Deposition (ICPCVD). Variable plasma properties providing high density, low ion energy, and low pressure plasma deposition of dielectric films. A large variety of substrates from wafers up to 200 mm diameter to parts loaded on carriers can be processed.
Related Information
Gases: NH3, N2O, SiH4, O2, H2, O2/CF4 etc. Typical deposited materials: Si, SiOx, SiNx, and certain other materials upon request. System for ICP plasma deposition
Tool Contact
anff-wa@uwa.edu.au
TOOL MAKE AND MODEL
LOCATION
System for ICP Plasma Deposition, Oxford Instruments Plasmalab80 plus ICPCVD
System for ICP plasma deposition
Description
Thin film deposition via Inductively Coupled Plasma Enhanced Chemical Vapour Deposition (ICPCVD)
Related Information
Process gases: SiH4, NH3, N2O, O2/CF4. Typical deposited materials: Si, SiOx, SiNx, and certain other materials upon request. System for ICP plasma deposition
Tool Contact
anff-wa@uwa.edu.au
TOOL MAKE AND MODEL
LOCATION
Plasma enhanced chemical vapour deposition system (PECVD), Oxford Instruments
Plasma enhanced chemical vapour deposition system (PECVD) for depositing SiOx, SiNx, a-Si
Description
Deposit dielectrics SiOx, SiNx and amorphous Si.
Related Information
Maximum electrode/sample temperature 650°C Plasma enhanced chemical vapour deposition system (PECVD) for depositing SiOx, SiNx, a-Si
Tool Contact
horst.punzmann@anu.edu.au
TOOL MAKE AND MODEL
LOCATION
Plasma enhanced chemical vapour deposition system (PECVD), Oxford Instruments Plasmalab 100
Plasma enhanced chemical vapour deposition system (PECVD)
Description
The Oxford Instruments PlasmaLab 100 PECVD is a Plasma Enhanced Chemical Vapor Deposition (PECVD) system designed for high-quality thin film deposition with excellent uniformity and process control. It is widely used in semiconductor fabrication, photonics, and dielectric layer applications.
Related Information
More information to come. Plasma enhanced chemical vapour deposition system (PECVD)
Tool Contact
anff@unsw.edu.au
TOOL MAKE AND MODEL
LOCATION
Plasma enhanced chemical vapour deposition system (PECVD), Oxford Instruments Plasmalab 100
Plasma enhanced chemical vapour deposition system (PECVD) for depositing SiOx and SiN
Description
The Oxford Instruments PlasmaLab 100 PECVD is a Plasma Enhanced Chemical Vapor Deposition (PECVD) system designed for high-quality thin film deposition with excellent uniformity and process control. It is widely used in semiconductor fabrication, photonics, and dielectric layer applications.
Related Information
Deposits SiO2, Si3N4, and amorphous Silicon at 100-400 degrees C. Plasma enhanced chemical vapour deposition system (PECVD) for depositing SiOx and SiN
Tool Contact
mcn-enquiries@nanomelbourne.com
TOOL MAKE AND MODEL
LOCATION
Plasma enhanced chemical vapour deposition system (PECVD), Oxford Instruments Plasmalab 100
Description
Used to coat planar samples with Silicon Oxide or Silicon Nitride thin film
Related Information
Tool Contact
mcn-enquiries@nanomelbourne.com
TOOL MAKE AND MODEL
LOCATION
Plasma Polymerisation Reactors
Deposition of a variety of organic films, including dedicated reactors for air plasma, allylamine (-NH2), acrylic acid (-COOH) and octadiene (-CH2). Samples up to 20 cm in diameter
Description
Custom built reactors to deposit a wide variety of organic thin films via plasma enhanced chemical vapour deposition (PE-CVD)
Related Information
Deposition of a variety of organic films, including dedicated reactors for air plasma, allylamine (-NH2), acrylic acid (-COOH) and octadiene (-CH2). Samples up to 20 cm in diameter
Tool Contact
kljarvis@swin.edu.au