Atomic Layer Deposition (ALD)
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Atomic Layer Deposition (ALD)

Atomic Layer Deposition (ALD) involves the deposition of materials one atomic monolayer at a time. It forms extremely uniform, conformal, pin-hole-free coatings even on high-aspect-ratio structures. This is achieved by pulsing a chemical precursor onto a hydroxylated substrate surface which reacts, resulting in a monolayer of material to be formed. The unused precursor is purged from the chamber and then the surface is again hydroxylated with water vapour or oxygen, followed by another purge. These steps are then repeated until the desired thickness of material is achieved. ALD has a vast array of applications from semiconductors, MEMS, nanostructures and optics through to wear-resistant coatings.

List of available equipment
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
ALD Cambridge NanoTech Fiji 200
Plasma assisted atomic layer deposition (PA-ALD) System
Melbourne Centre for Nanofabrication VIC Node
Description
The Fiji F200 is capable of both thermal and Plasma Assisted ALD (PA-ALD). PA-ALD expands the window for materials by decreasing activation energy and allows for deposition at lower temperatures to reduce precursor decomposition, deposition times and film contaminations. This tool is equipped to enable Cambridge Nanotech’s unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. In-situ film growth can be monitored using a spectroscopic ellipsometry.
Related Information
Substrate size - Up to 6 inch diameter. Maximum substrate heating - 500°C. Available ALD films- Al2O3, TiO2, SiO2, SnO2, ZnO, Ta2O5, MoO3, HfO2, TiN, AZO.
Tool Contact
mcn-enquiries@nanomelbourne.com
ALD Cambridge NanoTech Savannah S100
Atomic layer deposition (ALD) system in a glovebox
Melbourne Centre for Nanofabrication VIC Node
Description
This glovebox-integrated thermal ALD system allows the user to deposit materials in controlled environments.
Related Information
Available films- Al2O3, TiO2, WO3, NiOx. Compatible up to 4 inch diameter sample size
Tool Contact
mcn-enquiries@nanomelbourne.com
Atomic Layer Deposition System – Custom built
Atomic Layer Deposition System
Flinders University SA Node
Description
Atomic Layer Deposition System
Related Information
Configurable ALD system.
Tool Contact
Jason.Gascooke@flinders.edu.au
Cambridge NanoTech Savannah S200
Atomic layer deposition (ALD) system with two precursor sources
NSW Node University of New South Wales
Description
ALD system, two precursor sources
Related Information
More information to come.
Tool Contact
anff@unsw.edu.au
PicoSun R-200 ALD
Small Chip to 200mm substrate size temp range 100 degrees 500 degrees. Setup for deposition Al2o3 and HfO2
NSW Node University of New South Wales
Description
Atomic Layer Deposition (ALD) system
Related Information
More information to come.
Tool Contact
anff@unsw.edu.au
Picosun Sunale
Atomic layer deposition (ALD) system for depositing Al, Zn, Ti, Hf, Ta, Si, Zr oxides and TiN
ACT Node Australian National University (ANU)
Description
Load-locked ALD system with thermal and plasma ALD processes
Related Information
Sources for: Ti, Zn, Al, Si, Hf, Ta, Zr
Tool Contact
horst.punzmann@anu.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
ALD Cambridge NanoTech Fiji 200
Plasma assisted atomic layer deposition (PA-ALD) System
ACT Node Australian National University (ANU)
Description
The Fiji F200 is capable of both thermal and Plasma Assisted ALD (PA-ALD). PA-ALD expands the window for materials by decreasing activation energy and allows for deposition at lower temperatures to reduce precursor decomposition, deposition times and film contaminations. This tool is equipped to enable Cambridge Nanotech’s unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. In-situ film growth can be monitored using a spectroscopic ellipsometry.
Related Information
Substrate size - Up to 6 inch diameter. Maximum substrate heating - 500°C. Available ALD films- Al2O3, TiO2, SiO2, SnO2, ZnO, Ta2O5, MoO3, HfO2, TiN, AZO.
Tool Contact
mcn-enquiries@nanomelbourne.com
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
ALD Cambridge NanoTech Savannah S100
Atomic layer deposition (ALD) system in a glovebox
ACT Node Australian National University (ANU)
Description
This glovebox-integrated thermal ALD system allows the user to deposit materials in controlled environments.
Related Information
Available films- Al2O3, TiO2, WO3, NiOx. Compatible up to 4 inch diameter sample size
Tool Contact
mcn-enquiries@nanomelbourne.com
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Atomic Layer Deposition System – Custom built
Atomic Layer Deposition System
ACT Node Australian National University (ANU)
Description
Atomic Layer Deposition System
Related Information
Configurable ALD system.
Tool Contact
Jason.Gascooke@flinders.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Cambridge NanoTech Savannah S200
Atomic layer deposition (ALD) system with two precursor sources
ACT Node Australian National University (ANU)
Description
ALD system, two precursor sources
Related Information
More information to come.
Tool Contact
anff@unsw.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
PicoSun R-200 ALD
Small Chip to 200mm substrate size temp range 100 degrees 500 degrees. Setup for deposition Al2o3 and HfO2
ACT Node Australian National University (ANU)
Description
Atomic Layer Deposition (ALD) system
Related Information
More information to come.
Tool Contact
anff@unsw.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Picosun Sunale
Atomic layer deposition (ALD) system for depositing Al, Zn, Ti, Hf, Ta, Si, Zr oxides and TiN
ACT Node Australian National University (ANU)
Description
Load-locked ALD system with thermal and plasma ALD processes
Related Information
Sources for: Ti, Zn, Al, Si, Hf, Ta, Zr
Tool Contact
horst.punzmann@anu.edu.au