Electron Beam Lithography (EBL)
Electron Beam Lithography (EBL)
Electron Beam Lithography (EBL) allows users to write patterns with extremely high resolution, smaller than 10nm in size. It makes use of a highly energetic, tightly focused electron beam, which is scanned over a sample coated with an electron-sensitive resist. The electron beam scans the image according to a pattern defined on a CAD file. The sample is then developed in an appropriate solvent which reveals the structures defined into the resist. This acts as a mould for subsequent pattern transfer techniques such as dry etching or metal lift-off. Due to the high-resolution nature of the technique, EBL has a vast range of applications including nano-electronics, photonics, plasmonics, nano-fluidics, MEMS, x-ray and neutron optics.
List of available equipment
TOOL MAKE AND MODEL
LOCATION
E-Beam lithography, Elionix ELS-F125
ANFF NSW USYD
Electron Beam Lithography (EBL) System, FEI Sirion
ANFF NSW UNSW
Electron Beam Lithography (EBL) System, Raith 150
ANFF ACT
Electron Beam Lithography (EBL) System, Raith 150 TWO
ANFF NSW UNSW
Electron Beam Lithography (EBL) System, Raith EPBG
ANFF VIC MCN
Electron Beam Lithography (EBL) System, Raith Pioneer TWO
ANFF NSW UNSW
Electron Beam Lithography System, Elionix Boden ELS 125
ANFF ACT
TOOL MAKE AND MODEL
LOCATION
Electron Beam Lithography (EBL) System, FEI Sirion
Electron beam lithography (EBL) system
Description
EBL system, NPGS pattern generator, small write fields
Related Information
More information to come. Electron beam lithography (EBL) system
Tool Contact
anff@unsw.edu.au
TOOL MAKE AND MODEL
LOCATION
Electron Beam Lithography (EBL) System, Raith 150
Electron beam lithography (EBL) system
Description
Electron-beam lithography tool for sub-µm features, accurate positioning.
Related Information
30kV acceleration voltage, fixed beam moving stage, writing field up to 800x800 µm2 Electron beam lithography (EBL) system
Tool Contact
horst.punzmann@anu.edu.au
TOOL MAKE AND MODEL
LOCATION
Electron Beam Lithography (EBL) System, Raith 150 TWO
Electron beam lithography (EBL) system
Description
The RAITH150 Two e-beam writer can help with the transition from single-device-oriented research towards small-batch fabrication of nanodevices.
Related Information
Electron beam lithography (EBL) system
Tool Contact
anff@unsw.edu.au
TOOL MAKE AND MODEL
LOCATION
Electron Beam Lithography (EBL) System, Raith EPBG
Electron beam lithography (EBL) system
Description
EBL that is capable of exposing thick layers of e-beam resist of up to several micrometres with small forward scattering.Fully automated equipment features a laser height measurement for automatic focus adjustment.
Related Information
Can produces ~10nm structures.Metrology functions for self-calibration.Operates at up to 100 keV acceleration voltage.The electron beam spot can be focused to less than 5 nm in diameter. A wide range of beam currents (200 pA – 150 nA) are available for high-throughput as well as high-resolution exposures. 6-inch wafers and mask blanks measuring up to 5 × 5 inches can be processed.Rapid exposure with 50 MHz pattern generator.A laser-guided substrate stage provides 15 nm field stitching error.Maximum writing field of 1 x 1 mm.The overlay accuracy is below 20nm.For the conversion of the CAD patterns into machine specific format, including proximity effect correction (PEC), special software, TRACER and BEAMER from GenIsys GmbH are used. Electron beam lithography (EBL) system
Tool Contact
mcn-enquiries@nanomelbourne.com
TOOL MAKE AND MODEL
LOCATION
Electron Beam Lithography (EBL) System, Raith Pioneer TWO
Description
Electron beam lithography system
Related Information
Tool Contact
anff@unsw.edu.au
TOOL MAKE AND MODEL
LOCATION
Electron Beam Lithography System, Elionix Boden ELS 125
Electron beam lithography (EBL) system
Description
Electron Beam Lithography System with 5nm minimum line width.
Related Information
EBL with ancceleration voltage of 125kV, beam current 5pA - 100nA, min. beam diameter φ1.7nm, scan rate of 100MHz max; exposure area X: 210mm, Y: 210mm, field stitching accuracy ±10nm and an overlay accuracy of ±10nm. Electron beam lithography (EBL) system
Tool Contact
horst.punzmann@anu.edu.au