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Molecular Beam Epitaxy (MBE)
Molecular Beam Epitaxy (MBE)
Molecular Beam Epitaxy is a deposition technique that allows for crystals to be grown with extremely high purity. The process allows for subnanometre control over the structure of the crystal as it’s grown and positioning of dopants within the material, as well as film thickness. A series of molecular beams are directed onto a heated crystalline substrate. Upon collision with the substrate, the molecules in the beam bind, forming a new crystal layer. The entire growth occurs in an ultra high vacuum and there is no chemical mixing before the beams reach the substrate surface.
List of available equipment
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Pascal Laser MBE
dual chamber laser-MBE system
NSW Node
University of New South Wales
Description
dual chamber laser-MBE system
Related Information
More information to come.
Tool Contact
anff@unsw.edu.au
Riber 32P Molecular Beam Epitaxy System
MBE for II-VI Hg-based semiconductors
University of Western Australia
WA Node
Description
Versatile tool that epitaxially deposits precise amounts of material onto substrates. Often used to design and create semiconductor structures for manufacturing many novel devices.
Related Information
Features an in-situ x-ray photoelectron spectroscopy for observations during MBE growth. Materials: ultra pure Hg, Cd, Te, CdTe, ZnTe and II-VI Hg-based semiconductors.
Tool Contact
anff-wa@uwa.edu.au
Veeco Gen930
Molecular Beam Epitaxy (MBE) system for III-V materials
NSW Node
University of New South Wales
Description
III-V MBE system
Related Information
More information to come.
Tool Contact
anff@unsw.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Pascal Laser MBE
dual chamber laser-MBE system
NSW Node
University of New South Wales
Description
dual chamber laser-MBE system
Related Information
More information to come.
Tool Contact
anff@unsw.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Riber 32P Molecular Beam Epitaxy System
MBE for II-VI Hg-based semiconductors
NSW Node
University of New South Wales
Description
Versatile tool that epitaxially deposits precise amounts of material onto substrates. Often used to design and create semiconductor structures for manufacturing many novel devices.
Related Information
Features an in-situ x-ray photoelectron spectroscopy for observations during MBE growth. Materials: ultra pure Hg, Cd, Te, CdTe, ZnTe and II-VI Hg-based semiconductors.
Tool Contact
anff-wa@uwa.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Veeco Gen930
Molecular Beam Epitaxy (MBE) system for III-V materials
NSW Node
University of New South Wales
Description
III-V MBE system
Related Information
More information to come.
Tool Contact
anff@unsw.edu.au
