Harrick plasma etcher / asher

More information to come.

This high-powered Cl Etcher tool is a top-of-the-line solution for precise material removal tasks, specifically in the semiconductor and integrated circuits industry. It's perfect for creating intricate patternThis high-powered Cl Etcher tool is a top-of-the-line solution for precise material removal tasks, specifically in the semiconductor and integrated circuits industry. It's perfect for creating intricate patterns on silicon wafers, offering up to 1000W of Inductively Coupled Plasma power. What sets this tool apart is its availability of chlorine. The system is specifically designed to be Chlorine compatible, providing a wide range of etching capabilities on various materials. With this tool, you can achieve highly detailed etching at an impressive rate, even on the most complex projects. One of the standout features is its built-in chiller stage. This cooling system ensures your work remains at a controlled temperature throughout the etching process. Not only does this safeguard your silicon wafer from potential heat damage, it also maintains the highest level of precision and consistency in your work. Whether you're new to the world of semiconductor fabrication or a seasoned professional, this Cl Etcher tool brings a new level of reliability and efficiency to your projects. It's designed with usability in mind, so even if you're not entirely sure what your needs are, this tool's versatility and user-friendly features make it a valuable asset for a wide range of tasks.

1000w in ICP power, chiller stage

A vapour phase isotropic etching of silicon with very high etch selectivity of silicon to SiO2, SiN, photoresist, and Al.

More information to come.

General Plasma cleaning system

Plasma Asher commonly used to clean materials of organics materials, and can also be used for surface treatment of materials

Oxygen plasma etcher/asher.

Oxygen plasma etch tool and/or plasma exposure in a barrel electrode configuration.

ICP Etcher, 3KW ICP source, 8 gasses(CHF3,SF6,O2,N2,C4F8,Ar,He) interferometric etch rate monitor, up to 150mm wafers. The Oxford Plasmalab 100 inductively coupled plasma (ICP) etcher is a multipurpose Etching system that provides users anisotropic etching of silicon, silicon oxide, chalcogenide and other dielectric materials. The tool is equipped with a temperature controlled electrode to help users tailor their etch feature profiles. The manual load system can accommodate substrates ranging from 150 mm diameter wafers down to small pieces. Available gases are CH4, CHF3, SF6, C4F8, H2, Ar, and O2 Si based (Si, SiO2& Si3N4), oxides (ITO, TiO2, TeO2, Ta2O5, ZnO, etc), polymers (BCB, SU-8, Polysiloxanes, etc)

Dry Etch system,gas available for etching:SF6, CHF3, He, Ar, and O2

For surface cleaning and surface activation. Used when making a glass-PDMS or PDMS-PDMS microfluidic chip

More information to come.

Plasma etching of 6 inch wafers using a semi-isotropic dry etch process. Can produce features of 3µm.

Utilises SF6 and O. Used to etch SiC, SiN and SiO2 and polymer resists.

Reactive ion etch system dedicated to O2 and Ar plasma processes

Used primarily for resist and sample cleaning.

The Tepla Barrel Etcher is a versatile high-pressure plasma system designed for efficient cleaning and resist stripping. It excels in removing organic materials and resists with O2-plasma, ensuring clean pattern development with its low power setting. Additionally, it can strip resists and etch SiNx/SiOx layers by incorporating CF4. This robust machine can process either two 4-inch wafers or a single 6-inch wafer simultaneously.

Photoresist stripping using O2 and Argon